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Before October 15, visit booth B34 at the 2026 OCP Global Summit to see a rack-scale optical PCIe link demonstration featuring Astera's Scorpio smart fabric switch, @Lumentum's 1060 nm VCSEL-based optical interconnect solution, and Corning's multimode fiber connectivity solution. 🔗 https://investor.lumentum.com/financial-news-releases/news-details/2026/Lumentum-Astera-Labs-and-Corning-to-Demonstrate-1060-nm-VCSEL-Based-PCIe-over-Optics-for-AI-Rack-Scale-Connectivity-at-the-2026-OCP-Global-Summit/default.aspx

HMI, a spaceborne high-precision greenhouse gas imager developed by AIOFM, returns first on-orbit data

The spaceborne High-precision Main Greenhouse gas Imaging instrument (HMI) aboard the Pujiang-4 satellite began imaging on September 27 and downlinked its first data. The developer team led by Xiong Wei at the Anhui Institute of Optics and Fine Mechanics (AIOFM) performed a preliminary assessment and found that the payload's functions and performance met design requirements. HMI uses an information modulation technique combining spatial imaging and spectral interferometry, acquiring hyperspectral data in a 520 km orbit with a 30 km swath, spatial resolution better than 400 m, and spectral resolution better than 0.125 nm. From the first data, the team preliminarily estimated the methane emission rate of the Bogatyr open-pit mine in Kazakhstan at about 27.52±1.70 tons per hour.

Fujia Gallium Announces Production of 12-Inch Gallium Oxide Single Crystal

Fujia Gallium, a company incubated by the Hangzhou Institute of Optics and Mechanics, announced on March 26 that it had successfully produced a 12-inch (305 mm diameter) gallium oxide (Ga2O3) single crystal for the first time internationally, following its production of an 8-inch gallium oxide crystal in December 2025. The original report said 12-inch wafers can double the number of chips per wafer, dilute costs and facilitate integration into existing 12-inch silicon-based production lines. The company's next step will be to carry out full-chain collaborative development with downstream users covering substrates, epitaxy, devices and modules.

Fujia Gallium and Gongcheng Semiconductor Advance Gallium Oxide Device Validation

Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, is working with Shanghai Gongcheng Semiconductor on collaborative R&D across the entire gallium oxide materials-device-application value chain, which has now entered the device validation stage. Vertical Schottky diodes fabricated from Fujia Gallium's MOCVD gallium oxide epitaxial wafers have passed chip-level testing and packaging tests, and Gongcheng Semiconductor is advancing liquid-cooling module validation. The effort targets demand in new energy storage, data center liquid-cooling systems, and 400V motor drive platforms.

Fujia Gallium Unveils 6-Inch Gallium Oxide Vertical SBD Wafer at APCSCRM 2025

Fujia Gallium Chairman Qi Hongji unveiled a 6-inch gallium oxide vertical SBD wafer in a presentation at APCSCRM 2025. The wafer is based on the company's in-house high-mobility homoepitaxial gallium oxide epiwafer and was fabricated through joint tape-out with downstream device partners. The wafer includes four chip sizes: 3.0x3.0mm2, 1.0x1.0mm2, 0.5x0.5mm2, and phi 0.1mm.

Russell Center at Hangzhou Institute of Optics and Fine Mechanics Achieves Continuous Hollow-Core Fiber Drawing Beyond 15 Kilometers, with Minimum Loss Below 0.3 dB/km

The Russell Center at the Hangzhou Institute of Optics and Fine Mechanics has made progress in hollow-core microstructured fiber drawing, achieving continuous drawing lengths exceeding 15 kilometers with minimum loss below 0.3 dB/km in the telecommunications band. Related industrialization is being advanced by Xinkong Guanglian (Hangzhou) Technology Co., Ltd., established by the Russell Center, targeting high-speed interconnects for intelligent computing centers and 6G communication networks. The team said this validates the feasibility of long-distance hollow-core fiber drawing and lays the groundwork for mass production of ultra-low-loss, ultra-long-distance hollow-core microstructured fiber.

Fuja Gallium Produces China's First 6-Inch Gallium Oxide Single-Crystal Ingot by the VB Method

Fuja Gallium has successfully produced a 6-inch gallium oxide single-crystal ingot using the vertical Bridgman (VB) method, a first in China. The crystal has a constant-diameter height of 30 mm, meeting the processing requirements for complete 6-inch conductive gallium oxide substrates. The company previously became the first in China to produce 4-inch gallium oxide crystals by the VB method in December 2024. It has also launched VB-method gallium oxide crystal growth equipment and supporting process packages with proprietary intellectual property rights.

Jingfei Semiconductor Achieves Laser Lift-Off of 12-Inch Silicon Carbide Wafers

Jingfei Semiconductor has achieved lift-off of 12-inch silicon carbide wafers using its self-developed laser lift-off equipment. The technology has previously been validated by multiple customers in the 6-inch and 8-inch silicon carbide segments. Compared with mainstream 6-inch wafers, 12-inch wafers offer about four times the usable area and reduce per-chip costs by 30% to 40%. This breakthrough breaks the technological monopoly held by overseas manufacturers in large-size silicon carbide processing equipment and provides equipment support for expanding silicon carbide capacity.

Fujia Gallium Sets New Performance Record for Gallium Oxide MOCVD Homoepitaxial Wafers

Fujia Gallium has set a new performance record for its gallium oxide MOCVD homoepitaxial wafers. Tests by the National Institute of Metrology, China, showed that homoepitaxial wafers with a thickness exceeding 10 μm achieved a carrier concentration of 4.2E16 cm-3 and a mobility of 181.6 cm2/V·s, up further from 172.7 cm2/V·s in March 2025. The corresponding standardized epitaxial products were launched simultaneously in June 2025, helping accelerate the industrialization of gallium oxide high-voltage, high-power power electronic devices.

Fujia Gallium Achieves Breakthrough in MOCVD Homoepitaxial Film Technology on Gallium Oxide, with Thickness Exceeding 10 Micrometers

Fujia Gallium has grown MOCVD homoepitaxial films exceeding 10 micrometers in thickness on gallium oxide single-crystal substrates. Testing by the National Institute of Metrology, China, showed a background carrier concentration as low as 3.6E15 cm-3 and mobility of 172.7 cm2/V·s, reaching an internationally leading level. Standardized products are scheduled to launch in April 2025, providing key material support for high-voltage platforms in new energy vehicles and flexible power transmission devices for smart grids, and helping to advance the industrialization of vertical high-voltage power electronic devices rated above 3300V.

Fujia Gallium's 4-Inch VB-Method Gallium Oxide Substrates Reach Internationally Advanced Performance, with Crystal Growth Equipment Launched Simultaneously

Fujia Gallium has achieved a breakthrough in 4-inch gallium oxide crystal growth using the VB method. The single-crystal substrates show an XRD full width at half maximum better than 50 arcsec and are twin-free, with performance reaching an internationally advanced level. Substrate surface roughness is below 0.2 nm, bow is 1.8 μm, warp is 9.3 μm, and total thickness variation is below 10.0 μm, meeting the processing specifications for 4-inch silicon carbide substrates. The company is also launching its proprietary VB-method gallium oxide crystal growth equipment and supporting process package.

Fujia Gallium's Edge-Defined Film-Fed Growth One-Click Crystal Growth Technology Passes Expert Review, with Automated Growth Yield Above 90%

Fujia Gallium's edge-defined film-fed growth one-click crystal growth technology has passed an on-site review by an expert panel, validating the feasibility and stability of the automated gallium oxide crystal growth mode, with an automated growth yield exceeding 90%. The panel, organized by Professor Tao Xutang of Shandong Professor Long Shibin of the University of Science and Technology of China, and Professor Zhou Hong of Xidian University, conducted on-site assessment of the single-crystal automated growth program. This fully automated crystal growth equipment lays the foundation for the industrialization of gallium oxide single crystals and epitaxial materials.

Fujia Gallium Gallium Oxide Epitaxial Wafers Pass Second Device Validation Round, MOSFET Current Density Up 78.3%

After Fujia Gallium optimized its MBE epitaxy process, lateral power MOSFET devices built on its gallium oxide epitaxial wafers achieved a current density of 107 mA/mm and a specific on-resistance of about 21.2 mΩ∙cm² in the second tape-out round, representing a 78.3% increase in current density and roughly a 50% reduction in specific on-resistance versus first-round devices of the same specification. The work was supported by the National Key R&D Program project "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices." Fujia Gallium will continue iterating its epitaxial products and supplying gallium oxide substrates and epitaxial wafers to downstream device manufacturers.

Fujia Gallium's Gallium Oxide Epitaxial Wafer Passes Lateral MOSFET Power Device Validation

Fujia Gallium's MBE gallium oxide epitaxial wafer has completed validation in lateral MOSFET power devices. A device with a 12 μm gate-drain spacing achieved a breakdown voltage of 2242 V, a current density of 60 mA/mm and a specific on-resistance of about 42 mΩ∙cm², on par with comparable imported materials. The wafer uses a composite double-layer structure of an unintentionally doped layer and a Sn-doped layer on a semi-insulating (010) Fe-doped gallium oxide substrate. Standard products feature a doped-layer carrier concentration of 1-4E17 cm⁻³, mobility above 80 cm²/V·s and surface roughness below 2 nm.

Fujia Gallium Grows 3-Inch Gallium Oxide Single Crystal by Vertical Bridgman Method for First Time in China

In July 2024, Hangzhou Fujia Gallium Technology Co., Ltd. became the first company in China to grow a 3-inch gallium oxide single crystal using the vertical Bridgman (VB) method, and developed VB gallium oxide crystal growth equipment based on simulation technology. VB growth requires no iridium, greatly reducing costs, while its uniform temperature field and small temperature gradient make it easier to grow large, high-quality crystals and suit automated, large-scale production. The company had previously mastered edge-defined film-fed growth (EFG) technology for 6-inch conductive and insulating gallium oxide substrates, as well as EFG one-click crystal growth equipment.