Fujia Gallium Gallium Oxide Epitaxial Wafers Pass Second Device Validation Round, MOSFET Current Density Up 78.3%
After Fujia Gallium optimized its MBE epitaxy process, lateral power MOSFET devices built on its gallium oxide epitaxial wafers achieved a current density of 107 mA/mm and a specific on-resistance of about 21.2 mΩ∙cm² in the second tape-out round, representing a 78.3% increase in current density and roughly a 50% reduction in specific on-resistance versus first-round devices of the same specification. The work was supported by the National Key R&D Program project "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices." Fujia Gallium will continue iterating its epitaxial products and supplying gallium oxide substrates and epitaxial wafers to downstream device manufacturers.