Fujia Gallium Achieves Breakthrough in MOCVD Homoepitaxial Film Technology on Gallium Oxide, with Thickness Exceeding 10 Micrometers
Fujia Gallium has grown MOCVD homoepitaxial films exceeding 10 micrometers in thickness on gallium oxide single-crystal substrates. Testing by the National Institute of Metrology, China, showed a background carrier concentration as low as 3.6E15 cm-3 and mobility of 172.7 cm2/V·s, reaching an internationally leading level. Standardized products are scheduled to launch in April 2025, providing key material support for high-voltage platforms in new energy vehicles and flexible power transmission devices for smart grids, and helping to advance the industrialization of vertical high-voltage power electronic devices rated above 3300V.