Fujia Gallium Achieves Batch Supply of 2-Inch (011) Ga2O3 Substrates

Recently, Hangzhou Fuca Gallium Technology Co., Ltd. ("Fuca Gallium"), a company incubated by the Hangzhou Institute of Optics and Mechanics, has achieved stable volume supply capability for (011)-plane gallium oxide (Ga₂O₃) single-crystal substrates, enabling continuous delivery to research institutions and companies in China and abroad. This milestone marks a major breakthrough for Fuca Gallium in the commercialization of gallium oxide substrates across multiple crystal planes and specifications, further expanding the company's product portfolio.

Recently, Shenzhen Pinghu Laboratory conducted high-resolution X-ray diffraction (HRXRD) testing on Fuca Gallium's (011)-plane 2-inch gallium oxide (Ga₂O₃) single-crystal substrates. The results showed that the average full width at half maximum (FWHM) across five points on the wafer was approximately 16.2 arcsec.

Figure 1 HRXRD test results from Pinghu Laboratory

A smaller FWHM value indicates lower dislocation density and higher lattice perfection in the crystal. The measurements were performed in triple-axis mode, which offers higher angular resolution than double-axis testing and therefore more accurately reflects the intrinsic crystal quality. The results fully demonstrate that Fuca Gallium's volume-produced (011)-plane gallium oxide (Ga₂O₃) single-crystal substrates reach an internationally advanced quality level, providing highly reliable material assurance for downstream applications such as power devices and deep-ultraviolet detectors.

Figure 2 Fuca Gallium (011)-plane 2-inch specification sheet

As early as 2023, the team led by Professor Tao Xutu at Shandong University began systematic research on the gallium oxide (011) crystal plane, making it one of the first research groups to explore this area in depth. Their studies show that the dislocations that induce linear defects on the (011) plane are nearly parallel to those on the (001) plane, so such dislocations cannot penetrate the (011) plane. This prevents the line-like defects caused by these dislocations, significantly reducing device leakage current and breakdown risk. In addition, epitaxial layers grown on (011)-plane substrates exhibit lower defect density. Japan's NCT Corporation also uses (011)-plane substrates to fabricate vertical transistors with breakdown voltages exceeding 10 kV, further confirming the application prospects of this crystal plane in high-voltage power electronic devices. Fuca Gallium's ability to supply (011)-plane substrates in volume means customers can receive stable, consistent product deliveries, providing strong support for related research projects and device development.

Figure 3 Fujia Jiaye (011) gallium oxide substrate

Founded in late 2019, Fujia Jiaye is one of China's earliest pioneers in gallium oxide single-crystal growth research and is now a leading supplier of gallium oxide materials and equipment. The company has secured multiple rounds of financing totaling hundreds of millions of yuan, was named a 2026 Hangzhou "Quasi-Unicorn Enterprise," operates the world's first 10,000-wafer-per-year high-quality gallium oxide substrate production line, and is leading the drafting of the first national standard for gallium oxide. Looking ahead, Fujia Jiaye will continue to expand its product specifications and, guided by its corporate mission of "bringing good materials to the world," deliver higher-quality gallium oxide semiconductor materials in a wider range of specifications to customers worldwide, jointly advancing the high-quality development of the fourth-generation semiconductor industry.

Product Overview

Gallium oxide equipment:

The company has developed the world's first EFG system with a "one-click crystal growth" function, meeting the requirements for 2-6 inch crystal growth. It currently holds 6 authorized domestic patents and 4 authorized international patents, and can supply the equipment together with a complete process package.

The company has independently developed a fully automatic VB crystal growth system and was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth, enabling large-size VB single-crystal production. It currently holds 6 authorized domestic patents and 4 authorized international patents, and can provide VB equipment and process packages according to customer needs.

Gallium Oxide Single-Crystal Substrates:

As a pioneer in gallium oxide single-crystal growth research in China and a leading industry supplier, we are committed to providing global customers with high-quality gallium oxide single-crystal substrates. Our product line covers 2-6 inch 26 standard gallium oxide substrate products, and we can offer customized solutions for size, electrical properties, and crystal orientation to meet the needs of high-quality epitaxial wafer R&D and volume production.

Gallium oxide epitaxial wafers:

Built on proven MOCVD (metal-organic chemical vapor deposition) and MBE (molecular beam epitaxy) technology platforms, our product line covers 15 standard gallium oxide epiwafer products ranging from 2 to 6 inches, along with custom MBE gallium oxide epiwafers, providing customers with an integrated "substrate-epitaxy" solution. The epitaxial growth process employs a precise process control system, allowing key parameters such as epitaxial layer thickness, doping concentration, and compositional uniformity to be customized to customer requirements, meeting the R&D and production needs of devices across different power ratings and functional types.

Company Profile

Hangzhou Fujia Gallium Technology Co., Ltd.

Founded on December 31, 2019, the company operates under the vision of "enabling the world to use high-quality materials" and is dedicated to the industrialization of ultra-wide-bandgap gallium oxide semiconductor materials. Its core products include gallium oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, Bridgman (VB) and edge-defined film-fed growth (EFG) crystal growth equipment, and substrate grinding and polishing equipment. The company provides systematic solutions for material development, accelerates end-to-end integration of the ultra-wide-bandgap gallium oxide industry, and advances applications of gallium oxide materials in power devices, microwave and RF devices, and photodetection. A series of major achievements in gallium oxide have been featured in special reports by leading media outlets including CCTV, People's Daily, Xinhua Net, China Securities Journal, and The Paper. Corporate honors: Zhejiang Province science and technology SME in 2022; national high-tech enterprise in 2023; Hangzhou enterprise high-tech R&D center and Zhejiang Province "specialized, refined, distinctive and innovative" SME in 2024; ISO 9001 quality management system certification in 2025 (certificate number: 20225Q20294R0M); and Hangzhou "New Eagle" enterprise for 2024. In the gallium oxide field, the company is leading the drafting of the first national standard for gallium oxide, has undertaken one project of the National Development and Reform Commission and one project of the Ministry of Industry and Information Technology, and has participated in three national and provincial/ministerial-level projects supported by the National Natural Science Foundation of China, Zhejiang Province, and Shanghai. It has also secured 14 international patent grants (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patent grants, 3 registered "Fu Jia Gallium" trademarks, and 5 software copyrights (the "One-Click Crystal Growth" control software).