Fujia Gallium's Gallium Oxide Epitaxial Wafer Passes Lateral MOSFET Power Device Validation
Fujia Gallium's MBE gallium oxide epitaxial wafer has completed validation in lateral MOSFET power devices. A device with a 12 μm gate-drain spacing achieved a breakdown voltage of 2242 V, a current density of 60 mA/mm and a specific on-resistance of about 42 mΩ∙cm², on par with comparable imported materials. The wafer uses a composite double-layer structure of an unintentionally doped layer and a Sn-doped layer on a semi-insulating (010) Fe-doped gallium oxide substrate. Standard products feature a doped-layer carrier concentration of 1-4E17 cm⁻³, mobility above 80 cm²/V·s and surface roughness below 2 nm.