Fujia Gallium Grows 3-Inch Gallium Oxide Single Crystal by Vertical Bridgman Method for First Time in China

In July 2024, Hangzhou Fujia Gallium Technology Co., Ltd. became the first company in China to grow a 3-inch gallium oxide single crystal using the vertical Bridgman (VB) method, and developed VB gallium oxide crystal growth equipment based on simulation technology. VB growth requires no iridium, greatly reducing costs, while its uniform temperature field and small temperature gradient make it easier to grow large, high-quality crystals and suit automated, large-scale production. The company had previously mastered edge-defined film-fed growth (EFG) technology for 6-inch conductive and insulating gallium oxide substrates, as well as EFG one-click crystal growth equipment.