Nature Photonics@NaturePhotonicsOptics industryAI score4848

New article online: Dangling-bond-free, chemically anisotropic semiconductors for ultrahigh-resolution X-ray imaging. https://www.nature.com/articles/s41566-026-02013-y

XPANCEO partners with Contamac to advance AR contact lenses using FDA-cleared ophthalmic materials

Smart contact lens company XPANCEO has partnered with Contamac to advance the development of AR contact lenses using materials already used in FDA-cleared ophthalmic devices.

Fujia Gallium Approved to Establish Zhejiang Postdoctoral Workstation

Hangzhou Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, was approved on September 1 to establish a postdoctoral workstation in Zhejiang Province. It will partner with universities to train talent around core technologies such as ultra-wide-bandgap semiconductor materials.

SIOM Achieves Deep-Subwavelength Long-Wave Infrared Absorption and Thermal Emission Control

A team at the Shanghai Institute of Optics and Fine Mechanics (SIOM) proposed and validated a lithography-free Cr/a-GST/Bi planar metal-insulator-metal absorber based on an ultrahigh-refractive-index material. With a total thickness of only 550nm, it achieves high absorption and thermal emission control across the 8-14μm long-wave infrared band.

SIOM Reveals Degradation Mechanism of Ion-Beam-Finished Fused Silica Under Gamma Irradiation

A team led by researcher Wei Chaoyang at the Shanghai Institute of Optics and Fine Mechanics has systematically revealed the microscopic mechanism behind performance degradation of ion-beam-finished fused silica under gamma-ray irradiation induced by hydration, providing a basis for stable service of fused silica components in radiation-rich environments such as space.

Shanghai Institute of Optics and Mechanics Advances High-Repetition-Rate Phosphate Laser Nd:Glass Materials

A team led by researcher Hu Lili at the Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences, studied how compositional substitution in neodymium-doped phosphate laser glass affects structure and performance, providing a basis for Nd:glass materials used in high-repetition-rate lasers.

Fujia Gallium Wins Second Prize at Maker China Advanced Materials Competition

The Large-Size Semiconductor Gallium Oxide Single Crystal Manufacturing project from Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, won second prize in the enterprise category of the 11th Maker China Advanced Materials SME Innovation and Entrepreneurship Competition.

Shanghai Institute of Optics and Mechanics Reveals Thermo-Optical Dynamics of Laser-Driven Phase Transition in VO2

A team led by Jun Wang has revealed the multi-stage process of a VO2/SiO2 heterostructure under continuous mid-infrared laser driving, from thermal accumulation and phase-transition acceleration to thermal saturation.

Al2O3/HfO2 Nanolaminate Gradient-Index Structure Boosts Damage Resistance of Picosecond Laser Reflection Coatings

A team led by Jianda Shao and Meiping Zhu used an Al2O3/HfO2 nanolaminate gradient-index structure to improve the damage resistance of picosecond laser reflection thin films.

Fujia Gallium Completes New Financing Round of Over 100 Million Yuan

Fujia Gallium, a gallium oxide materials company incubated by the Hangzhou Institute of Optics and Fine Mechanics, has completed a new financing round of over 100 million yuan.

Fujia Gallium Extends Gallium Oxide Epitaxy to 12 Inches

Fujia Gallium is developing 12-inch gallium oxide MOCVD epitaxy, extending its 8-inch process to 12 inches, a global first.

SIOM Achieves Ultrafast Nonlinear Optical Control in CdO Nanograting Films

SIOM has made progress in geometry-induced quantum interference and ultrafast nonlinear optical control in CdO nanograting films.

Changchun Institute of Optics Develops Color-Tunable, Highly Efficient Heat-Insulating Programmable Photovoltaic Window

A team led by Guo Xiaoyang and Liu Xingyuan at the Changchun Institute of Optics, in collaboration with the Changchun Institute of Applied Chemistry, has built asymmetric Fabry-Perot microcavities using double-sided dielectric/metal/dielectric (DMD) electrodes to create color-programmable semi-transparent organic photovoltaic windows. The results were published in Advanced Functional Materials. The device achieves a power conversion efficiency of 10.07%, an average visible light transmittance of 35.9%, an infrared blocking rate of 91.59%, and a color rendering index of 89.8. The reflected color can be tuned by varying the thickness of the MoO3 dielectric layers on both sides, covering most of the sRGB color gamut.

AIOFM LD Side-Pumped Er,Pr:GYAP Laser Achieves High-Energy Q-Switched Output at 2.7 Micrometers

The Laser Technology Center at AIOFM published a paper in Optics Express describing the introduction of Gd3+ and Pr3+ into YAP crystals to obtain Er,Pr:GYAP crystals, achieving high-energy laser output at 2.7 micrometers using LD side pumping.

Fujia Gallium Achieves Batch Supply of 2-Inch (011) Ga2O3 Substrates

Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, can now stably supply (011)-plane 2-inch gallium oxide (Ga2O3) single-crystal substrates in volume, with continuous deliveries to research institutions and companies in China and abroad. Three-axis HRXRD tests at the Shenzhen Pinghu Laboratory showed an average full width at half maximum of about 16.2 arcsec across five points on the wafer. The original report says the substrates can provide material support for downstream applications such as power devices and deep-ultraviolet detectors.

National Semiconductor Materials Standards Project Review Meeting Held in Fuyang, Hangzhou

The National Semiconductor Materials Standards Project Review Meeting and Standards Formulation and Revision Working Conference was held April 27 to 30 in Fuyang, Hangzhou, co-organized by the Hangzhou Institute of Optics and Mechanics and its incubated company Fujia Gallium. The meeting reviewed proposed semiconductor materials standards projects for 2026 and conducted approval, pre-review and discussion of multiple standards.

Changchun Institute of Optics, Fine Mechanics and Physics Uses Graphite Addition in Binder Jetting Additive Manufacturing of High-Performance Silicon Carbide Mirrors

A team led by Researcher Zhang Ge at the Changchun Institute of Optics, Fine Mechanics and Physics and Wang Gong's team at the Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, published a paper in Light: Advanced Manufacturing proposing a binder jetting additive manufacturing method for graphite/silicon carbide composite powder that improves particle flowability and promotes the conversion of free silicon into secondary silicon carbide.

Changchun Institute of Optics, Fine Mechanics and Physics Achieves Multidimensional Fluorescence Lifetime Imaging in the Second Near-Infrared Window with Yb3+ Energy-Relay Hierarchical Lanthanide Nanoparticles

A team led by Researcher Chang Yulei at the Changchun Institute of Optics, Fine Mechanics and Physics published a paper in Advanced Materials proposing Yb3+ energy-relay-based hierarchical lanthanide nanostructures that tune ion luminescence lifetimes across 1060-2050 nm. In a Tm3+ system, for example, the lifetime can be continuously tuned from 654 us to 11918 us while the emission intensity at 1850 nm remains essentially unchanged. The team built its own time-gated imaging system based on an MCT short-wave infrared detector, simultaneously distinguishing six targets in mice with inter-channel crosstalk below 10%.

Changchun Institute of Optics, Fine Mechanics and Physics Develops All-Dielectric Material with Low Infrared Emissivity and High Radio Wave Transmittance

A team led by Researcher Li Wei at the Changchun Institute of Optics, Fine Mechanics and Physics published a paper in Science Advances proposing long-wave transparent low-emissivity all-dielectric materials (LLM) that achieve mid-infrared reflection through Mie scattering by infrared-transparent dielectric microparticles such as NaCl, avoiding the attenuation of wireless signals caused by metals.

Fujia Gallium Announces Production of 12-Inch Gallium Oxide Single Crystal

Fujia Gallium, a company incubated by the Hangzhou Institute of Optics and Mechanics, announced on March 26 that it had successfully produced a 12-inch (305 mm diameter) gallium oxide (Ga2O3) single crystal for the first time internationally, following its production of an 8-inch gallium oxide crystal in December 2025. The original report said 12-inch wafers can double the number of chips per wafer, dilute costs and facilitate integration into existing 12-inch silicon-based production lines. The company's next step will be to carry out full-chain collaborative development with downstream users covering substrates, epitaxy, devices and modules.

Hangzhou Institute of Optics and Mechanics Brings Incubated Companies to LASER World of PHOTONICS CHINA 2026

The Hangzhou Institute of Optics and Mechanics, together with the Russell Center for Advanced Lightwave Science, Hengying Technology, Chuxin Optoelectronics, Hengmai Optics, Tuozhi Optoelectronics, and Yuexin Microelectronics, will attend LASER World of PHOTONICS CHINA 2026, held from March 18 to 20. The participating companies cover fields including infrared optical materials, semiconductor lasers, ultra-precision machining equipment, microstructured specialty optical fibers, volume grating devices, and high-end analog chips. This year's exhibition brings together more than 1,400 exhibitors from around the world, with an exhibition area exceeding 100,000 square meters.

Fujia Gallium and Gongcheng Semiconductor Advance Gallium Oxide Device Validation

Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, is working with Shanghai Gongcheng Semiconductor on collaborative R&D across the entire gallium oxide materials-device-application value chain, which has now entered the device validation stage. Vertical Schottky diodes fabricated from Fujia Gallium's MOCVD gallium oxide epitaxial wafers have passed chip-level testing and packaging tests, and Gongcheng Semiconductor is advancing liquid-cooling module validation. The effort targets demand in new energy storage, data center liquid-cooling systems, and 400V motor drive platforms.

Fujia Gallium and Shanghai Institute of Optics and Mechanics Report 4-Inch VB-Method Gallium Oxide Single Crystal

A team from Fujia Gallium and the Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences, published a paper in CrystEngComm reporting the preparation of (100)-oriented gallium oxide single crystals with a diameter of 4 inches and a thickness exceeding 30 mm using the vertical Bridgman (VB) method. Tests showed wafer HRXRD full width at half maximum of 49.6-64.8 arcsec, and the paper states that the crystals have high crystalline quality and good structural uniformity. The team had previously produced 8-inch gallium oxide single crystals using the VB method.

Fujia Gallium's 10,000-Wafer Gallium Oxide Substrate Line Passes Environmental Acceptance

The Annual Production of 10,000 Large-Size High-Quality Gallium Oxide Single Crystal Substrates project by Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, completed completion-stage environmental protection acceptance in January 2026, giving its 6/8-inch production line the environmental permits for scaled production. The article reviews Fujia Gallium's previous progress in MOCVD homoepitaxy, VB-method 6-inch and 8-inch single crystal preparation, and financing of nearly 100 million yuan.

Hangzhou Institute of Optics and Mechanics' Advanced Optoelectronic Functional Materials Proof-of-Concept Center Receives Provincial Recognition

The Zhejiang Provincial Department of Science and Technology has released its 2025 list of provincial-level proof-of-concept centers, including the Advanced Optoelectronic Functional Materials Proof-of-Concept Center built by the Hangzhou Institute of Optics and Mechanics. The article cites Fujia Gallium's gallium oxide project and the Russell Center's progress in continuous hollow-core fiber drawing exceeding 15 kilometers as typical cases.

Hangzhou Daily Reports on Fuyang's Fuchun Chip City and Companies Incubated by the Hangzhou Institute of Optics and Mechanics

Hangzhou Daily reported on February 6 that Fuyang is building the Fuchun Chip City integrated circuit industry landmark, mentioning companies incubated by the Hangzhou Institute of Optics and Mechanics, including Fujia Gallium and Jingfei Semiconductor. The report said Fujia Gallium produced China's first 6-inch gallium oxide single crystal ingot using the VB method in September 2025, the Russell Center's hollow-core fiber continuous drawing exceeded 15 kilometers, and Jingfei Semiconductor mastered laser lift-off technology for 12-inch silicon carbide wafers.

Hangzhou Institute of Optics and Fine Mechanics Director Qi Hongji Named Zhejiang Young and Middle-aged Expert with Outstanding Contributions

The People's Government of Zhejiang Province issued a commendation naming Qi Hongji, director of the Hangzhou Institute of Optics and Fine Mechanics, a Zhejiang Young and Middle-aged Expert with Outstanding Contributions. Qi Hongji's research focuses on ultra-wide-bandgap semiconductor crystal materials and he also serves as secretary-general of the Optical Materials Committee of the Chinese Optical Society.

Hangzhou Institute of Optics and Mechanics and Its Incubated Companies Exhibit at 2025 China Optoelectronic Materials Conference

The Hangzhou Institute of Optics and Mechanics formed an exhibition consortium with the Russell Advanced Optical Wave Science Center, Hengying Technology, Yinhu Laser and Tuozhi Optoelectronics to participate in the 2025 China Optoelectronic Materials Conference, held in Shanghai on December 23-24. The exhibits covered low-loss hollow-core fibers, infrared optical materials, laser micro- and nano-processing for chip packaging materials, and volume gratings. The conference focused on advanced glass materials, optical communications and laser materials, among other areas.

Fujia Gallium Chairman Qi Hongji on Gallium Oxide Commercialization

Fujia Gallium Chairman Qi Hongji gave an exclusive interview to the Asia Gallium Oxide Alliance during APCSCRM 2025, describing the company's journey from the laboratory to gallium oxide industrialization. He said the VB method 6-inch single-crystal growth technology greatly reduces precious metal consumption and lowers single-crystal substrate production costs, and introduced a one-click crystal growth system combining artificial intelligence and precision control.

Fujia Gallium Unveils 6-Inch Gallium Oxide Vertical SBD Wafer at APCSCRM 2025

Fujia Gallium Chairman Qi Hongji unveiled a 6-inch gallium oxide vertical SBD wafer in a presentation at APCSCRM 2025. The wafer is based on the company's in-house high-mobility homoepitaxial gallium oxide epiwafer and was fabricated through joint tape-out with downstream device partners. The wafer includes four chip sizes: 3.0x3.0mm2, 1.0x1.0mm2, 0.5x0.5mm2, and phi 0.1mm.

Hangzhou Institute of Optics and Fine Mechanics Exhibits with Incubated Companies at "New Knowledge, New Quality: Zhejiang's Best Results" Showcase and Trade Fair

The Hangzhou Institute of Optics and Fine Mechanics (HIOM), serving as a proof-of-concept center, joined the HIOM Russell Center and incubated company Hengying Technology at the "New Knowledge, New Quality: Zhejiang's Best Results" showcase and trade fair ("AI+" special session). The group highlighted innovative practices and industrialization outcomes at the intersection of artificial intelligence and optoelectronic technology. On site, HIOM presented its full-chain service capabilities for early-stage scientific and technological achievements, including technical verification, pilot-scale incubation, and industry matchmaking, and used core products from the Russell Center and Hengying Technology to illustrate innovation strengths in fiber manufacturing, optoelectronic materials, and other fields.

Hangzhou Institute of Optics and Fine Mechanics Exhibits with Four Incubated Companies, Including Hengying Technology and Yinhu Laser, at the 2025 Laser Manufacturing and Additive Manufacturing Exhibition

The Hangzhou Institute of Optics and Fine Mechanics exhibited with four incubated companies, Hengying Technology, Yinhu Laser, Jiayue Intelligent, and Hengmai Optics, at the 2025 Laser Manufacturing and Additive Manufacturing Exhibition, showcasing industrialized products from optoelectronic industry-chain technologies. The exhibition was held November 29-30 at the China National Convention Center in Beijing, bringing together 296 industry-leading companies, universities, and research institutions across an exhibition area of 22,000 square meters. The participating companies covered infrared optical materials, laser micro- and nano-processing of chip packaging materials, high-temperature intelligent equipment, and other fields.

Qi Hongji Presentation: How Far Is Gallium Oxide Industrialization for Ultra-Wide-Bandgap Semiconductors?

Fujia Gallium Chairman Qi Hongji delivered an invited presentation titled "How Far Is Gallium Oxide Industrialization for Ultra-Wide-Bandgap Semiconductors?" at the 5th Youth Academic Conference on Artificial Crystal Materials, dividing gallium oxide industrialization into four stages: availability, usefulness, ease of use, and desirability. He believes that once single crystals and epitaxy break through the 6-inch barrier, gallium oxide devices can accelerate iteration using mature silicon power device tape-out lines, while material defects, P-type materials, heat dissipation, and reliability remain key future research topics.

Infrared Optical Materials Company Hengying Technology Named a Doctoral Innovation Station by Zhejiang Association for Science and Technology

Hengying Technology, an incubated company of the Hangzhou Institute for Optics and Photonics, has been included in the fifth group of Doctoral Innovation Stations of the Zhejiang Association for Science and Technology. The innovation station tackles key challenges in the preparation of large-size, high-performance fluorogallate infrared glass, optimization of infrared material properties and industrialization, and has jointly trained seven master's degree students with the University of Chinese Academy of Sciences.

Fuja Gallium Produces China's First 6-Inch Gallium Oxide Single-Crystal Ingot by the VB Method

Fuja Gallium has successfully produced a 6-inch gallium oxide single-crystal ingot using the vertical Bridgman (VB) method, a first in China. The crystal has a constant-diameter height of 30 mm, meeting the processing requirements for complete 6-inch conductive gallium oxide substrates. The company previously became the first in China to produce 4-inch gallium oxide crystals by the VB method in December 2024. It has also launched VB-method gallium oxide crystal growth equipment and supporting process packages with proprietary intellectual property rights.

Hangzhou Institute of Optics and Fine Mechanics Exhibits with Seven Incubated Companies at the 26th China International Optoelectronic Exposition

The Hangzhou Institute of Optics and Fine Mechanics exhibited at the 26th China International Optoelectronic Exposition together with seven incubated companies: Hengying Technology, Fuja Gallium, Tuozhi Optoelectronics, Aiou Optics, Muqi Optoelectronics, Yuexin Microelectronics, and Chuxin Optoelectronics. The group showcased industrialized products from optoelectronic industry-chain technologies, including infrared optical materials, gallium oxide single-crystal substrates and epitaxial wafers, volume Bragg gratings, ultrafast lasers, optical modules, semiconductor pump sources, and ADC chips.

Fuja Gallium Completes Nearly 100 Million Yuan A+ Round to Build China's First 6-Inch Gallium Oxide Single-Crystal and Epitaxial Wafer Production Line

Fuja Gallium, a company incubated by the Hangzhou Institute of Optics and Fine Mechanics, has announced the completion of an A+ funding round of nearly 100 million yuan, with participation from Shenzhen Capital Group, China Internet Investment Fund, Renzhi Capital, Zhongying Venture Capital, Shengde Investment, and others. The funds will be used to build China's first production line for 6-inch gallium oxide single crystals and epitaxial wafers, with annual capacity of 10,000 wafers expected by the end of 2026, as well as to improve single-crystal production efficiency, optimize epitaxial quality, and conduct device verification. The company has also launched its "one-click crystal growth" intelligent equipment, focusing on full-chain development of gallium oxide single-crystal preparation and epitaxy technology.

Hangzhou Institute of Optics and Mechanics' 'Proof-of-Concept Center for Advanced Optoelectronic Functional Materials' Selected for Zhejiang's First Batch of 22 Proof-of-Concept Centers

The 'Proof-of-Concept Center for Advanced Optoelectronic Functional Materials' built by the Hangzhou Institute of Optics and Mechanics has been selected for Zhejiang Province's first batch of 22 proof-of-concept centers. The center has established a public service platform for laser and optical characterization, a shared semiconductor process platform in Fuyang District, and the Russell Advanced Optical Wave Science Center. The characterization platform is equipped with more than 30 instruments for optical, electrical and thermal testing. The center will focus on four major fields: optoelectronic functional materials, semiconductor materials, specialty optical fiber materials, and optoelectronic equipment, advancing proof-of-concept validation and industrialization of research results.

People's Daily Front-Page Lead Story Highlights Commercialization Case of the Hangzhou Institute of Optics and Mechanics' Research Results

A front-page lead feature in People's Daily spotlights Hangzhou Fujiagallium Co., Ltd., a company incubated by the Hangzhou Institute of Optics and Mechanics, as a model case of the institute's role in industrializing scientific and technological achievements. The gallium oxide single crystal developed by Fujiagallium grows at a high temperature of 1800 degrees Celsius and targets high-power power electronic devices and ultraviolet detectors. The Hangzhou Institute of Optics and Mechanics' proof-of-concept center opened up equipment such as Hall effect test systems and X-ray diffractometers, saving one to two years in industrialization.

Fujia Gallium Sets New Performance Record for Gallium Oxide MOCVD Homoepitaxial Wafers

Fujia Gallium has set a new performance record for its gallium oxide MOCVD homoepitaxial wafers. Tests by the National Institute of Metrology, China, showed that homoepitaxial wafers with a thickness exceeding 10 μm achieved a carrier concentration of 4.2E16 cm-3 and a mobility of 181.6 cm2/V·s, up further from 172.7 cm2/V·s in March 2025. The corresponding standardized epitaxial products were launched simultaneously in June 2025, helping accelerate the industrialization of gallium oxide high-voltage, high-power power electronic devices.