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Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score5454 Fujia Gallium Extends Gallium Oxide Epitaxy to 12 Inches
Fujia Gallium is developing 12-inch gallium oxide MOCVD epitaxy, extending its 8-inch process to 12 inches, a global first.
Shanghai Institute of Optics and Fine Mechanics (SIOM) · Research UpdatesOptics industryPicksAI score5959 SIOM Achieves Ultrafast Nonlinear Optical Control in CdO Nanograting Films
SIOM has made progress in geometry-induced quantum interference and ultrafast nonlinear optical control in CdO nanograting films.
Why we recommend it: The source provides specific data and details that help assess actual progress in this direction
OFweek Optics Network · NewsOptics industryAI score5151 Nika Optics Completes Nearly 100 Million Yuan Series A, Breaks Through Volume Holographic Materials
Nika Optics has completed a Series A round of nearly 100 million yuan, with investors including BOCI, breaking the overseas blockade on volume holographic materials.
OFweek Optics Network · NewsOptics industryAI score3434 Fluorinated Photosensitive Polyimide Offers Strong Potential
Fluorinated photosensitive polyimide enables direct photolithographic patterning and offers superior dielectric and optical properties.
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) · Research ProgressOptics industryAI score4949 Changchun Institute of Optics Develops Color-Tunable, Highly Efficient Heat-Insulating Programmable Photovoltaic Window
A team led by Guo Xiaoyang and Liu Xingyuan at the Changchun Institute of Optics, in collaboration with the Changchun Institute of Applied Chemistry, has built asymmetric Fabry-Perot microcavities using double-sided dielectric/metal/dielectric (DMD) electrodes to create color-programmable semi-transparent organic photovoltaic windows. The results were published in Advanced Functional Materials. The device achieves a power conversion efficiency of 10.07%, an average visible light transmittance of 35.9%, an infrared blocking rate of 91.59%, and a color rendering index of 89.8. The reflected color can be tuned by varying the thickness of the MoO3 dielectric layers on both sides, covering most of the sRGB color gamut.
Anhui Institute of Optics and Fine Mechanics (AIOFM) · Research ProgressOptics industryAI score5454 AIOFM LD Side-Pumped Er,Pr:GYAP Laser Achieves High-Energy Q-Switched Output at 2.7 Micrometers
The Laser Technology Center at AIOFM published a paper in Optics Express describing the introduction of Gd3+ and Pr3+ into YAP crystals to obtain Er,Pr:GYAP crystals, achieving high-energy laser output at 2.7 micrometers using LD side pumping.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4545 Fujia Gallium Achieves Batch Supply of 2-Inch (011) Ga2O3 Substrates
Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, can now stably supply (011)-plane 2-inch gallium oxide (Ga2O3) single-crystal substrates in volume, with continuous deliveries to research institutions and companies in China and abroad. Three-axis HRXRD tests at the Shenzhen Pinghu Laboratory showed an average full width at half maximum of about 16.2 arcsec across five points on the wafer. The original report says the substrates can provide material support for downstream applications such as power devices and deep-ultraviolet detectors.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2424 National Semiconductor Materials Standards Project Review Meeting Held in Fuyang, Hangzhou
The National Semiconductor Materials Standards Project Review Meeting and Standards Formulation and Revision Working Conference was held April 27 to 30 in Fuyang, Hangzhou, co-organized by the Hangzhou Institute of Optics and Mechanics and its incubated company Fujia Gallium. The meeting reviewed proposed semiconductor materials standards projects for 2026 and conducted approval, pre-review and discussion of multiple standards.
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) · Research ProgressOptics industryAI score5454 Changchun Institute of Optics, Fine Mechanics and Physics Uses Graphite Addition in Binder Jetting Additive Manufacturing of High-Performance Silicon Carbide Mirrors
A team led by Researcher Zhang Ge at the Changchun Institute of Optics, Fine Mechanics and Physics and Wang Gong's team at the Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, published a paper in Light: Advanced Manufacturing proposing a binder jetting additive manufacturing method for graphite/silicon carbide composite powder that improves particle flowability and promotes the conversion of free silicon into secondary silicon carbide.
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) · Research ProgressOptics industryAI score4949 Changchun Institute of Optics, Fine Mechanics and Physics Achieves Multidimensional Fluorescence Lifetime Imaging in the Second Near-Infrared Window with Yb3+ Energy-Relay Hierarchical Lanthanide Nanoparticles
A team led by Researcher Chang Yulei at the Changchun Institute of Optics, Fine Mechanics and Physics published a paper in Advanced Materials proposing Yb3+ energy-relay-based hierarchical lanthanide nanostructures that tune ion luminescence lifetimes across 1060-2050 nm. In a Tm3+ system, for example, the lifetime can be continuously tuned from 654 us to 11918 us while the emission intensity at 1850 nm remains essentially unchanged. The team built its own time-gated imaging system based on an MCT short-wave infrared detector, simultaneously distinguishing six targets in mice with inter-channel crosstalk below 10%.
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) · Research ProgressOptics industryAI score5757 Changchun Institute of Optics, Fine Mechanics and Physics Develops All-Dielectric Material with Low Infrared Emissivity and High Radio Wave Transmittance
A team led by Researcher Li Wei at the Changchun Institute of Optics, Fine Mechanics and Physics published a paper in Science Advances proposing long-wave transparent low-emissivity all-dielectric materials (LLM) that achieve mid-infrared reflection through Mie scattering by infrared-transparent dielectric microparticles such as NaCl, avoiding the attenuation of wireless signals caused by metals.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4646 Fujia Gallium Announces Production of 12-Inch Gallium Oxide Single Crystal
Fujia Gallium, a company incubated by the Hangzhou Institute of Optics and Mechanics, announced on March 26 that it had successfully produced a 12-inch (305 mm diameter) gallium oxide (Ga2O3) single crystal for the first time internationally, following its production of an 8-inch gallium oxide crystal in December 2025. The original report said 12-inch wafers can double the number of chips per wafer, dilute costs and facilitate integration into existing 12-inch silicon-based production lines. The company's next step will be to carry out full-chain collaborative development with downstream users covering substrates, epitaxy, devices and modules.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score3030 Hangzhou Institute of Optics and Mechanics Brings Incubated Companies to LASER World of PHOTONICS CHINA 2026
The Hangzhou Institute of Optics and Mechanics, together with the Russell Center for Advanced Lightwave Science, Hengying Technology, Chuxin Optoelectronics, Hengmai Optics, Tuozhi Optoelectronics, and Yuexin Microelectronics, will attend LASER World of PHOTONICS CHINA 2026, held from March 18 to 20. The participating companies cover fields including infrared optical materials, semiconductor lasers, ultra-precision machining equipment, microstructured specialty optical fibers, volume grating devices, and high-end analog chips. This year's exhibition brings together more than 1,400 exhibitors from around the world, with an exhibition area exceeding 100,000 square meters.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3333 Fujia Gallium and Gongcheng Semiconductor Advance Gallium Oxide Device Validation
Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, is working with Shanghai Gongcheng Semiconductor on collaborative R&D across the entire gallium oxide materials-device-application value chain, which has now entered the device validation stage. Vertical Schottky diodes fabricated from Fujia Gallium's MOCVD gallium oxide epitaxial wafers have passed chip-level testing and packaging tests, and Gongcheng Semiconductor is advancing liquid-cooling module validation. The effort targets demand in new energy storage, data center liquid-cooling systems, and 400V motor drive platforms.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3737 Fujia Gallium and Shanghai Institute of Optics and Mechanics Report 4-Inch VB-Method Gallium Oxide Single Crystal
A team from Fujia Gallium and the Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences, published a paper in CrystEngComm reporting the preparation of (100)-oriented gallium oxide single crystals with a diameter of 4 inches and a thickness exceeding 30 mm using the vertical Bridgman (VB) method. Tests showed wafer HRXRD full width at half maximum of 49.6-64.8 arcsec, and the paper states that the crystals have high crystalline quality and good structural uniformity. The team had previously produced 8-inch gallium oxide single crystals using the VB method.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2929 Fujia Gallium's 10,000-Wafer Gallium Oxide Substrate Line Passes Environmental Acceptance
The Annual Production of 10,000 Large-Size High-Quality Gallium Oxide Single Crystal Substrates project by Fujia Gallium, an incubated company of the Hangzhou Institute of Optics and Mechanics, completed completion-stage environmental protection acceptance in January 2026, giving its 6/8-inch production line the environmental permits for scaled production. The article reviews Fujia Gallium's previous progress in MOCVD homoepitaxy, VB-method 6-inch and 8-inch single crystal preparation, and financing of nearly 100 million yuan.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2424 Hangzhou Institute of Optics and Mechanics' Advanced Optoelectronic Functional Materials Proof-of-Concept Center Receives Provincial Recognition
The Zhejiang Provincial Department of Science and Technology has released its 2025 list of provincial-level proof-of-concept centers, including the Advanced Optoelectronic Functional Materials Proof-of-Concept Center built by the Hangzhou Institute of Optics and Mechanics. The article cites Fujia Gallium's gallium oxide project and the Russell Center's progress in continuous hollow-core fiber drawing exceeding 15 kilometers as typical cases.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2525 Hangzhou Daily Reports on Fuyang's Fuchun Chip City and Companies Incubated by the Hangzhou Institute of Optics and Mechanics
Hangzhou Daily reported on February 6 that Fuyang is building the Fuchun Chip City integrated circuit industry landmark, mentioning companies incubated by the Hangzhou Institute of Optics and Mechanics, including Fujia Gallium and Jingfei Semiconductor. The report said Fujia Gallium produced China's first 6-inch gallium oxide single crystal ingot using the VB method in September 2025, the Russell Center's hollow-core fiber continuous drawing exceeded 15 kilometers, and Jingfei Semiconductor mastered laser lift-off technology for 12-inch silicon carbide wafers.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score1616 Hangzhou Institute of Optics and Fine Mechanics Director Qi Hongji Named Zhejiang Young and Middle-aged Expert with Outstanding Contributions
The People's Government of Zhejiang Province issued a commendation naming Qi Hongji, director of the Hangzhou Institute of Optics and Fine Mechanics, a Zhejiang Young and Middle-aged Expert with Outstanding Contributions. Qi Hongji's research focuses on ultra-wide-bandgap semiconductor crystal materials and he also serves as secretary-general of the Optical Materials Committee of the Chinese Optical Society.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2929 Hangzhou Institute of Optics and Mechanics and Its Incubated Companies Exhibit at 2025 China Optoelectronic Materials Conference
The Hangzhou Institute of Optics and Mechanics formed an exhibition consortium with the Russell Advanced Optical Wave Science Center, Hengying Technology, Yinhu Laser and Tuozhi Optoelectronics to participate in the 2025 China Optoelectronic Materials Conference, held in Shanghai on December 23-24. The exhibits covered low-loss hollow-core fibers, infrared optical materials, laser micro- and nano-processing for chip packaging materials, and volume gratings. The conference focused on advanced glass materials, optical communications and laser materials, among other areas.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2525 Fujia Gallium Chairman Qi Hongji on Gallium Oxide Commercialization
Fujia Gallium Chairman Qi Hongji gave an exclusive interview to the Asia Gallium Oxide Alliance during APCSCRM 2025, describing the company's journey from the laboratory to gallium oxide industrialization. He said the VB method 6-inch single-crystal growth technology greatly reduces precious metal consumption and lowers single-crystal substrate production costs, and introduced a one-click crystal growth system combining artificial intelligence and precision control.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3232 Fujia Gallium Unveils 6-Inch Gallium Oxide Vertical SBD Wafer at APCSCRM 2025
Fujia Gallium Chairman Qi Hongji unveiled a 6-inch gallium oxide vertical SBD wafer in a presentation at APCSCRM 2025. The wafer is based on the company's in-house high-mobility homoepitaxial gallium oxide epiwafer and was fabricated through joint tape-out with downstream device partners. The wafer includes four chip sizes: 3.0x3.0mm2, 1.0x1.0mm2, 0.5x0.5mm2, and phi 0.1mm.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score1717 Hangzhou Institute of Optics and Fine Mechanics Exhibits with Incubated Companies at "New Knowledge, New Quality: Zhejiang's Best Results" Showcase and Trade Fair
The Hangzhou Institute of Optics and Fine Mechanics (HIOM), serving as a proof-of-concept center, joined the HIOM Russell Center and incubated company Hengying Technology at the "New Knowledge, New Quality: Zhejiang's Best Results" showcase and trade fair ("AI+" special session). The group highlighted innovative practices and industrialization outcomes at the intersection of artificial intelligence and optoelectronic technology. On site, HIOM presented its full-chain service capabilities for early-stage scientific and technological achievements, including technical verification, pilot-scale incubation, and industry matchmaking, and used core products from the Russell Center and Hengying Technology to illustrate innovation strengths in fiber manufacturing, optoelectronic materials, and other fields.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2020 Hangzhou Institute of Optics and Fine Mechanics Exhibits with Four Incubated Companies, Including Hengying Technology and Yinhu Laser, at the 2025 Laser Manufacturing and Additive Manufacturing Exhibition
The Hangzhou Institute of Optics and Fine Mechanics exhibited with four incubated companies, Hengying Technology, Yinhu Laser, Jiayue Intelligent, and Hengmai Optics, at the 2025 Laser Manufacturing and Additive Manufacturing Exhibition, showcasing industrialized products from optoelectronic industry-chain technologies. The exhibition was held November 29-30 at the China National Convention Center in Beijing, bringing together 296 industry-leading companies, universities, and research institutions across an exhibition area of 22,000 square meters. The participating companies covered infrared optical materials, laser micro- and nano-processing of chip packaging materials, high-temperature intelligent equipment, and other fields.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2525 Qi Hongji Presentation: How Far Is Gallium Oxide Industrialization for Ultra-Wide-Bandgap Semiconductors?
Fujia Gallium Chairman Qi Hongji delivered an invited presentation titled "How Far Is Gallium Oxide Industrialization for Ultra-Wide-Bandgap Semiconductors?" at the 5th Youth Academic Conference on Artificial Crystal Materials, dividing gallium oxide industrialization into four stages: availability, usefulness, ease of use, and desirability. He believes that once single crystals and epitaxy break through the 6-inch barrier, gallium oxide devices can accelerate iteration using mature silicon power device tape-out lines, while material defects, P-type materials, heat dissipation, and reliability remain key future research topics.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2121 Infrared Optical Materials Company Hengying Technology Named a Doctoral Innovation Station by Zhejiang Association for Science and Technology
Hengying Technology, an incubated company of the Hangzhou Institute for Optics and Photonics, has been included in the fifth group of Doctoral Innovation Stations of the Zhejiang Association for Science and Technology. The innovation station tackles key challenges in the preparation of large-size, high-performance fluorogallate infrared glass, optimization of infrared material properties and industrialization, and has jointly trained seven master's degree students with the University of Chinese Academy of Sciences.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3838 Fuja Gallium Produces China's First 6-Inch Gallium Oxide Single-Crystal Ingot by the VB Method
Fuja Gallium has successfully produced a 6-inch gallium oxide single-crystal ingot using the vertical Bridgman (VB) method, a first in China. The crystal has a constant-diameter height of 30 mm, meeting the processing requirements for complete 6-inch conductive gallium oxide substrates. The company previously became the first in China to produce 4-inch gallium oxide crystals by the VB method in December 2024. It has also launched VB-method gallium oxide crystal growth equipment and supporting process packages with proprietary intellectual property rights.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2323 Hangzhou Institute of Optics and Fine Mechanics Exhibits with Seven Incubated Companies at the 26th China International Optoelectronic Exposition
The Hangzhou Institute of Optics and Fine Mechanics exhibited at the 26th China International Optoelectronic Exposition together with seven incubated companies: Hengying Technology, Fuja Gallium, Tuozhi Optoelectronics, Aiou Optics, Muqi Optoelectronics, Yuexin Microelectronics, and Chuxin Optoelectronics. The group showcased industrialized products from optoelectronic industry-chain technologies, including infrared optical materials, gallium oxide single-crystal substrates and epitaxial wafers, volume Bragg gratings, ultrafast lasers, optical modules, semiconductor pump sources, and ADC chips.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2222 Fuja Gallium Completes Nearly 100 Million Yuan A+ Round to Build China's First 6-Inch Gallium Oxide Single-Crystal and Epitaxial Wafer Production Line
Fuja Gallium, a company incubated by the Hangzhou Institute of Optics and Fine Mechanics, has announced the completion of an A+ funding round of nearly 100 million yuan, with participation from Shenzhen Capital Group, China Internet Investment Fund, Renzhi Capital, Zhongying Venture Capital, Shengde Investment, and others. The funds will be used to build China's first production line for 6-inch gallium oxide single crystals and epitaxial wafers, with annual capacity of 10,000 wafers expected by the end of 2026, as well as to improve single-crystal production efficiency, optimize epitaxial quality, and conduct device verification. The company has also launched its "one-click crystal growth" intelligent equipment, focusing on full-chain development of gallium oxide single-crystal preparation and epitaxy technology.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score2323 Hangzhou Institute of Optics and Mechanics' 'Proof-of-Concept Center for Advanced Optoelectronic Functional Materials' Selected for Zhejiang's First Batch of 22 Proof-of-Concept Centers
The 'Proof-of-Concept Center for Advanced Optoelectronic Functional Materials' built by the Hangzhou Institute of Optics and Mechanics has been selected for Zhejiang Province's first batch of 22 proof-of-concept centers. The center has established a public service platform for laser and optical characterization, a shared semiconductor process platform in Fuyang District, and the Russell Advanced Optical Wave Science Center. The characterization platform is equipped with more than 30 instruments for optical, electrical and thermal testing. The center will focus on four major fields: optoelectronic functional materials, semiconductor materials, specialty optical fiber materials, and optoelectronic equipment, advancing proof-of-concept validation and industrialization of research results.
Hangzhou Institute of Optics and Fine Mechanics · Recent HighlightsOptics industryAI score1616 People's Daily Front-Page Lead Story Highlights Commercialization Case of the Hangzhou Institute of Optics and Mechanics' Research Results
A front-page lead feature in People's Daily spotlights Hangzhou Fujiagallium Co., Ltd., a company incubated by the Hangzhou Institute of Optics and Mechanics, as a model case of the institute's role in industrializing scientific and technological achievements. The gallium oxide single crystal developed by Fujiagallium grows at a high temperature of 1800 degrees Celsius and targets high-power power electronic devices and ultraviolet detectors. The Hangzhou Institute of Optics and Mechanics' proof-of-concept center opened up equipment such as Hall effect test systems and X-ray diffractometers, saving one to two years in industrialization.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4242 Fujia Gallium Sets New Performance Record for Gallium Oxide MOCVD Homoepitaxial Wafers
Fujia Gallium has set a new performance record for its gallium oxide MOCVD homoepitaxial wafers. Tests by the National Institute of Metrology, China, showed that homoepitaxial wafers with a thickness exceeding 10 μm achieved a carrier concentration of 4.2E16 cm-3 and a mobility of 181.6 cm2/V·s, up further from 172.7 cm2/V·s in March 2025. The corresponding standardized epitaxial products were launched simultaneously in June 2025, helping accelerate the industrialization of gallium oxide high-voltage, high-power power electronic devices.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4242 Fujia Gallium Achieves Breakthrough in MOCVD Homoepitaxial Film Technology on Gallium Oxide, with Thickness Exceeding 10 Micrometers
Fujia Gallium has grown MOCVD homoepitaxial films exceeding 10 micrometers in thickness on gallium oxide single-crystal substrates. Testing by the National Institute of Metrology, China, showed a background carrier concentration as low as 3.6E15 cm-3 and mobility of 172.7 cm2/V·s, reaching an internationally leading level. Standardized products are scheduled to launch in April 2025, providing key material support for high-voltage platforms in new energy vehicles and flexible power transmission devices for smart grids, and helping to advance the industrialization of vertical high-voltage power electronic devices rated above 3300V.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4343 Fujia Gallium's 4-Inch VB-Method Gallium Oxide Substrates Reach Internationally Advanced Performance, with Crystal Growth Equipment Launched Simultaneously
Fujia Gallium has achieved a breakthrough in 4-inch gallium oxide crystal growth using the VB method. The single-crystal substrates show an XRD full width at half maximum better than 50 arcsec and are twin-free, with performance reaching an internationally advanced level. Substrate surface roughness is below 0.2 nm, bow is 1.8 μm, warp is 9.3 μm, and total thickness variation is below 10.0 μm, meeting the processing specifications for 4-inch silicon carbide substrates. The company is also launching its proprietary VB-method gallium oxide crystal growth equipment and supporting process package.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score2929 Fujia Gallium's Gallium Oxide Single-Crystal Growth Equipment Wins Order from Leading Domestic Semiconductor R&D Institution at Start of New Year
Hangzhou Fujia Gallium Technology Co., Ltd. has recently received an order for its gallium oxide single-crystal growth equipment from a well-known domestic semiconductor research institution, marking a strong start to sales in the new year. The one-click crystal growth system is built around intelligence and automation, completing the entire process of seeding, necking, shouldering and diameter growth with a single start command, reducing reliance on operators and improving yield. The company continues to optimize software algorithms and hardware configurations, providing customers with full lifecycle service.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3737 Fujia Gallium's Edge-Defined Film-Fed Growth One-Click Crystal Growth Technology Passes Expert Review, with Automated Growth Yield Above 90%
Fujia Gallium's edge-defined film-fed growth one-click crystal growth technology has passed an on-site review by an expert panel, validating the feasibility and stability of the automated gallium oxide crystal growth mode, with an automated growth yield exceeding 90%. The panel, organized by Professor Tao Xutang of Shandong Professor Long Shibin of the University of Science and Technology of China, and Professor Zhou Hong of Xidian University, conducted on-site assessment of the single-crystal automated growth program. This fully automated crystal growth equipment lays the foundation for the industrialization of gallium oxide single crystals and epitaxial materials.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4444 Fujia Gallium MBE Gallium Oxide Epitaxial Films Match World-Leading Electrical Performance, Published in Materials Today Physics
A team led by Zhang Hongliang at Xiamen University systematically studied the electrical transport properties of gallium oxide epitaxial films prepared by Fujia Gallium using MBE, with results showing electrical performance on par with the best reported by Japan's NCT and the United States' UCSB teams. Fujia Gallium's UID Ga2O3 films can have background carrier concentrations controlled to 1.6×10^16 cm^-3, room-temperature electron mobility as high as 129 cm^2 V^-1 s^-1, and, after Sn doping, carrier concentrations tunable from 1.7×10^17 to 2.8×10^19 cm^-3.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score4141 Fujia Gallium Gallium Oxide Epitaxial Wafers Pass Second Device Validation Round, MOSFET Current Density Up 78.3%
After Fujia Gallium optimized its MBE epitaxy process, lateral power MOSFET devices built on its gallium oxide epitaxial wafers achieved a current density of 107 mA/mm and a specific on-resistance of about 21.2 mΩ∙cm² in the second tape-out round, representing a 78.3% increase in current density and roughly a 50% reduction in specific on-resistance versus first-round devices of the same specification. The work was supported by the National Key R&D Program project "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices." Fujia Gallium will continue iterating its epitaxial products and supplying gallium oxide substrates and epitaxial wafers to downstream device manufacturers.
Hangzhou Institute of Optics and Fine Mechanics · Industry NewsOptics industryAI score3939 Fujia Gallium's Gallium Oxide Epitaxial Wafer Passes Lateral MOSFET Power Device Validation
Fujia Gallium's MBE gallium oxide epitaxial wafer has completed validation in lateral MOSFET power devices. A device with a 12 μm gate-drain spacing achieved a breakdown voltage of 2242 V, a current density of 60 mA/mm and a specific on-resistance of about 42 mΩ∙cm², on par with comparable imported materials. The wafer uses a composite double-layer structure of an unintentionally doped layer and a Sn-doped layer on a semi-insulating (010) Fe-doped gallium oxide substrate. Standard products feature a doped-layer carrier concentration of 1-4E17 cm⁻³, mobility above 80 cm²/V·s and surface roughness below 2 nm.